High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure
نویسندگان
چکیده
منابع مشابه
High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure
A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2012
ISSN: 1556-276X
DOI: 10.1186/1556-276x-7-431